H5TC4G63CFR - PBAR DDR3 DRAM Memory Chip 256MX16 CMOS PBGA96 Dram Module

H5TC4G63CFR-PBAR DDR3 DRAM Memory ( 256MX16, CMOS, PBGA96)

The parts are a 4Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. SK Hynix DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. SK Hynix 4Gb DDR3L
SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While
all addresses and control inputs are latched on the rising edges of the clock (falling edges of the clock),
data, data strobes and write data masks inputs are sampled on both rising and falling edges of it. The data
paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

SPECIFICATIONS

dynamic random access memory

ram memory ic

H5TC4G63CFR - PBAR DDR3 DRAM Memory Chip 256MX16 CMOS PBGA96 Dram Module Images