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H9HCNNNBUUMLHR DRAM Memory Chip ,16gb Memory Ram For Personal Computer LPDDR4 BGA200

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Beijing Silk Road Enterprise Management Services Co.,LTD

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H9HCNNNBUUMLHR DRAM Memory Chip ,16gb Memory Ram For Personal Computer LPDDR4 BGA200

Model Number : H9HCNNNBUUMLHR

Certification : Original Parts

MOQ : 1 package

Price : Negotiation

Payment Terms : T/T, PayPal, Western Union, Escrow and others

Supply Ability : 6000pcs per month

Delivery Time : 3-5 work days

Packaging Details : 10cm X 10cm X 5cm

Item number : H9HCNNNBUUMLHR

Package : BGA200

Org. : X16

Density : 16GB

Vol : 1.8V-1.1V-1.1V

Speed : L

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DRAM Memory Chip DRAM Memory Chip H9HCNNNBUUMLHR 16Gb LPDDR4 BGA200 Memory Chip Storage

Specifications

H9HCNNNBUUMLHR

Features

· VDD1 = 1.8V (1.7V to 1.95V)
· VDD2, VDDCA and VDDQ = 1.1V (1.06 to 1.17)
· VSSQ terminated DQ signals (DQ, DQS_t, DQS_c, DMI)
· Single data rate architecture for command and address;
- all control and address latched at rising edge of the clock
· Double data rate architecture for data Bus;
- two data accesses per clock cycle
· Differential clock inputs (CK_t, CK_c)
· Bi-directional differential data strobe (DQS_t, DQS_c)
- Source synchronous data transaction aligned to bi-directional differential data strobe (DQS_t, DQS_c)
· DMI pin support for write data masking and DBIdc functionality
· Programmable RL (Read Latency) and WL (Write Latency)
· Burst length: 16 (default), 32 and On-the-fly
- On the fly mode is enabled by MRS
· Auto refresh and self refresh supported
· All bank auto refresh and directed per bank auto refresh supported
· Auto TCSR (Temperature Compensated Self Refresh)
· PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask
· Background ZQ Calibration

**Product Specifications**
Part No.	Den.	Org.	Vol	Speed	Power	PKG	Product Status
H9HCNNNBUUMLHR	16Gb	x16	1.8V-1.1V-1.1V	L	Low Power	200	Mass production
H9HKNNNBTUMUAR	16Gb	x16	1.8V-1.1V-1.1V	L	Low Power	272	Mass production
H9HKNNNBTUMUBR	16Gb	x16	1.8V-1.1V-1.1V	L	Low Power	366	Mass production
H9HKNNNDGUMUAR	24Gb	x16	1.8V-1.1V-1.1V	L	Low Power	272	Mass production
H9HKNNNDGUMUBR	24Gb	x16	1.8V-1.1V-1.1V	L / M	Low Power	366	Mass production
H9HKNNNCTUMUAR	32Gb	x16	1.8V-1.1V-1.1V	L	Low Power	272	Mass production
H9HKNNNCTUMUBR	32Gb	x16	1.8V-1.1V-1.1V	L / M	Low Power	366	Mass production

Product Tags:

dynamic random access memory

ram memory ic

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