HY5PS1G831CFP-S6 DDR DRAM Mobile Flash Memory Chip 128MX8 0.4ns CMOS PBGA60

Flash Memory Chip HY5PS1G831CFP-S6 DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60

Features

• VDD = 1.8 +/- 0.1V•VDDQ = 1.8 +/- 0.1V
• All inputs and outputs are compatible with SSTL_18 interface
• 8 banks
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous-data transaction aligned to bidirectional data strobe (DQS, /DQS)
• Differential Data Strobe (DQS, /DQS)
• Data outputs on DQS, /DQS edges when read (edged DQ)
• Data inputs on DQS centers when write(centered DQ)
• On chip DLL align DQ, DQS and /DQS transition with CK transition
• DM mask write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
• Programmable CAS latency 3, 4, 5 and 6 supported
• Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• Internal eight bank operations with single pulsed RAS
• Auto refresh and self refresh supported
• tRAS lockout supported
• 8K refresh cycles /64ms
• JEDEC standard 60ball FBGA(x4/x8) , 84ball FBGA(x16)
• Full strength driver option controlled by EMR
• On Die Termination supported
• Off Chip Driver Impedance Adjustment supported
• Read Data Strobe supported (x8 only)
• Self-Refresh High Temperature Entry

• This product is in compliance with the directive pertaining of RoHS.

Feature:

flash memory ic chip

flash memory controller chip

HY5PS1G831CFP-S6 DDR DRAM Mobile Flash Memory Chip 128MX8 0.4ns CMOS PBGA60 Images